IRF9540N IC

The IRF9450N IC is a International Rectifier based on HEXFETs P-Channel Power MOSFET Transistor Module. It utilizes advanced processing techniques to achieve extremely low on resistance per silicon area. It has various features such as: - Advanced process technology, Dynamic dv/dt rating, fast switching, fully avalanche rated and many more. It provides designer with an extremely efficient and reliable device for use in a wide variety of applications like: - Amplifier, switching, automobile, lighting and so on.

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Name	IRF9450 N IC
Package	TO-220 AB
Category	Power MOSFET
Configuration	Single
Maximum Power Dissipation	140000 mW
Number of Elements per Chip	1
Maximum Continuous Drain Current	23 A
Maximum Drain Source Resistance	0.117 Ohm@10 V
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	±20 V
Typical Fall Time	51 ns
Typical Gate Charge @ Vgs	97 nC(Max)@10 V
Typical Input Capacitance @ Vds	1300 pF@25 V
Typical Rise Time	67 ns
Typical Turn-Off Delay Time	51 ns
Typical Turn-On Delay Time	15 ns
Operating Temperature Range	-55°C to 175°C
Channel Type	P
Mounting Type	Through Hole
Number of Pins	3
Width	4.69mm (Max)
Height	8.77mm (Max)
Length	10.54mm (Max)